Photoexcited carrier lifetime and Auger recombination in 1.3-μm InGaAsP
- 1 February 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (3), 259-261
- https://doi.org/10.1063/1.93907
Abstract
We have measured the time-resolved decay of photoexcited carriers in InGaAsP subsequent to mode-locked laser pulse excitation at 1.06 μ. Carrier decay rates were evaluated from bleaching recovery and luminescence decay measurements as a function of injected carrier density over a two-decade range (1017–1019 cm−3). At low and moderate density the decay rate follows the variation with excitation expected for radiative decay. At high carrier density (above 2×1018 cm−3), the decay rate increases more rapidly with carrier density, indicating the onset of nonradiative recombination which can be accounted for by Auger recombination with an Auger coefficient of A=2.3±1×10−29 cm6 s−1. This compares to the calculated Auger coefficient range of 0.7–1.4×10−28 cm6 s−1. We discuss the influence of our measured decay rates on the threshold temperature dependence of InGaAsP-1.3 μ lasers by calculating expected T0 values, using a range of representative values for threshold carrier density and temperature dependence of the Auger decay rate. Our results suggest that while Auger recombination does contribute to the temperture dependence of the InGaAsP-1.3 μ laser it may not alone fully account for the observed room- temperature T0 values.Keywords
This publication has 14 references indexed in Scilit:
- Temperature dependence of the lasing characteristics of the 1.3 µm InGaAsP-InP and GaAs-Al0.36Ga0.64As DH lasersIEEE Journal of Quantum Electronics, 1982
- The case for Auger recombination in In1−xGaxAsyP1−yJournal of Applied Physics, 1982
- Gain-current relation for In0.72Ga0.28As0.6P0.4 lasersJournal of Applied Physics, 1981
- Calculated absorption, emission, and gain in In0.72Ga0.28As0.6P0.4Journal of Applied Physics, 1980
- The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band AbsorptionJapanese Journal of Applied Physics, 1980
- Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasersElectronics Letters, 1980
- The temperature dependence of threshold current for double-heterojunction lasersJournal of Applied Physics, 1979
- Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure LasersJapanese Journal of Applied Physics, 1979
- Dynamic Burstein shift in GaAsSolid State Communications, 1976
- Picosecond Optical Measurements of Band-to-Band Auger Recombination of High-Density Plasmas in GermaniumPhysical Review Letters, 1975