Calculated absorption, emission, and gain in In0.72Ga0.28As0.6P0.4

Abstract

The absorption, emission, and gain spectra of In_0.72Ga_0.28As_0.6P_0.4 (λ_g =1.3 μm), which lattice matches InP, is calculated using a Gaussian fit to Halperin‐Lax band tails and Stern’s matrix element. The calculation is done both for p‐ and n‐type material at various impurity concentrations. The spectral width of emission increases both with increasing doping and impurity concentration. All results are for 297 K. The gain‐versus‐excitation rate is given by the equation g (cm⁻¹)=0.057 (J_nom −2400), where J_nom is the nominal current density in the active layer expressed in A/cm² μm. Also, the photon energy at maximum gain increases with increasing excitation rate.