Effect of Electrode Spacing on the Equivalent Base Resistance of Point-Contact Transistors

Abstract

A theoretical expression for the equivalent base resistance ϒ_b of point-contact transistors is derived here. This expression is shown to check experimental values reasonably well if the severity of some assumptions made for purposes of analysis is considered. Electrode spacing, germanium-slice thickness, and resistivity of the semiconductor are shown to be the properties that affect ϒb</sub. primarily.