The deposition of group III nitrides on silicon substrates
- 16 April 1979
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 59 (1), 25-31
- https://doi.org/10.1016/0040-6090(79)90360-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Optical properties of aluminium nitride prepared by chemical and plasmachemical vapour depositionPhysica Status Solidi (a), 1977
- Vapor Phase Epitaxial Growth of GaN on GaAs, GaP, Si, and Sapphire Substrates from GaBr[sub 3] and NH[sub 3]Journal of the Electrochemical Society, 1973
- Vapor epitaxy of gallium nitrideJournal of Crystal Growth, 1972
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- Growth Characteristics of AlN Films Pyrolytically Deposited on SiJournal of Applied Physics, 1968