Observation of Spin-Dependent Thermal Emission from Deep Levels in Semiconductors
- 1 August 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 51 (5), 427-429
- https://doi.org/10.1103/physrevlett.51.427
Abstract
The first observation of spin-dependent thermal emission from a deep gap state in a semiconductor is reported. As a result the silicon dangling-bond defects at the Si/Si interface can be directly correlated with a 0.36-eV-deep hole trap.
Keywords
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