Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface
- 15 September 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (6), 542-544
- https://doi.org/10.1063/1.93583
Abstract
Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic Pb centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation-induced interface states.Keywords
This publication has 16 references indexed in Scilit:
- The origin and nature of silicon band-gap states at the Si/SiO2 interfaceApplied Physics Letters, 1981
- Theory of continuously distributed trap states at Si-SiO2 interfacesJournal of Applied Physics, 1981
- A model of interface states and charges at the Si-SiO2 interface: Its predictions and comparison with experimentsJournal of Applied Physics, 1981
- Theory of the electronic structure of the Si-SiinterfacePhysical Review B, 1980
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- Chemical and Structural Aspects of the Irradiation Behavior of SiO2 Films on SiliconIEEE Transactions on Nuclear Science, 1977
- Origin of Interface States and Oxide Charges Generated by Ionizing RadiationIEEE Transactions on Nuclear Science, 1976
- The Current Understanding of Charges in the Thermally Oxidized Silicon StructureJournal of the Electrochemical Society, 1974
- Low energy electron irradiation of the Si-SiO2 interfaceThin Solid Films, 1972
- Defect Structure and Irradiation Behavior of Noncrystalline SiO2IEEE Transactions on Nuclear Science, 1971