Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers
- 15 December 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (12), 1302-1304
- https://doi.org/10.1063/1.95127
Abstract
Using the threshold carrier density measurement technique, the differential gain dg/dn at lasing threshold was measured. It was found that the differential gain dg/dn of 1.3-μm InGaAsP lasers is a strong function of the active layer doping level P0. At a doping level of 2.5×1018 cm−3, the differential gain is several times larger than at 4×1017 cm−3. A factor of 2 increase in the modulation bandwidth is demonstrated using the dg/dn dependency on P0.Keywords
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