Optical characterization of InGaAs-InAlAs strained-layer superlattices grown by molecular beam epitaxy
- 29 September 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (13), 794-796
- https://doi.org/10.1063/1.97549
Abstract
InGaAs-InAlAs strained-layer superlattices, with both controlled strain magnitude and direction in the narrower gap layers, were grown by molecular beam epitaxy. Exciton related peaks and steplike structures in transmission spectra were clearly observed even at room temperature. The close agreement of these observed peak positions with theoretical calculations indicates that heavy-hole and light-hole level reversal was attained in the tensile-strained narrower gap layers.Keywords
This publication has 12 references indexed in Scilit:
- Growth and characterization of InxGa1−xAs/InyGa1−yAs strained-layer superlattice on InP substrateJournal of Applied Physics, 1986
- Photoluminescence study of InxAl1−xAs-GaAs strained-layer superlatticesJournal of Applied Physics, 1986
- Hall-effect measurements in p-type InGaAs/GaAs strained-layer superlatticesApplied Physics Letters, 1986
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Enhancement of optical nonlinearity in p-type semiconductor quantum wells due to confinement and stressApplied Physics Letters, 1985
- Growth conditions and characterization of InGaAs/GaAs strained layers superlatticesJournal of Applied Physics, 1984
- InAsSb strained-layer superlattices for long wavelength detector applicationsJournal of Vacuum Science & Technology B, 1984
- Energy band-gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substratesJournal of Applied Physics, 1983
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982