The Influence of Dissolved Oxygen in SiO2 on C-V Characteristics
- 1 September 1967
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 6 (9)
- https://doi.org/10.1143/jjap.6.1072
Abstract
Characteristic of Si–SiO2 interface which is obtained by dry O2 oxidation under various conditions and by annealing in nitrogen atmosphere, are investigated by the capacitance-voltage measurement. It is shown that concentration of dissolved oxygen in SiO2 is in linear proportion to flat band voltage in C–V curve, and is closely related to “shoulder surface stage”. The experimental results suggest that aluminum metal on SiO2 have gettering action for dissolved oxygen in heat treatment of Si–SiO2–Al system at 300–500°C.Keywords
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