PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GaAs GROWN FROM Ga SOLUTION

Abstract

GaAs single crystals were grown epitaxially from Ga solution with carrier concentrations in the 10¹⁴ cm^‐3 range and electron mobilities between 7500 and 9300 cm²/V‐sec at 300°K, and 50,000 and 95,000 cm²/V‐sec at 77°K. A comparison of the theoretical and experimental curves for the mobility vs temperature indicates that the significant scattering mechanisms are ionized impurities and phonons in the temperature range of 77°K to 430°K. This indicates that the epitaxial layers do not contain other mobility‐limiting imperfections to a significant degree. Photoluminescence spectra of the epitaxial layers did not show any emission due to keep lying imperfection levels.