Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase epitaxy
- 1 June 1976
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 34 (1), 132-138
- https://doi.org/10.1016/0022-0248(76)90271-2
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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