Phase equilibria in III–V quaternary systems—application to Al-Ga-P-As
- 1 January 1974
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 35 (3), 409-420
- https://doi.org/10.1016/s0022-3697(74)80034-x
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substratesApplied Physics Letters, 1973
- Calculation of regular solution interaction parameters in semiconductor solid solutionsJournal of Physics and Chemistry of Solids, 1973
- Phase diagram of the system Al-Ga-PJournal of Crystal Growth, 1973
- GaAsSb-AlGaAsSb Double Heterojunction LasersJapanese Journal of Applied Physics, 1972
- Calculation of ternary phase diagrams of III–V systemsJournal of Physics and Chemistry of Solids, 1972
- Activity Coefficients for a Regular Multicomponent SolutionJournal of the Electrochemical Society, 1972
- Double Heterojunction AlGaAsP Quaternary LasersApplied Physics Letters, 1971
- Spectroscopic Analysis of Cohesive Energies and Heats of Formation of Tetrahedrally Coordinated SemiconductorsPhysical Review B, 1970
- Phase equilibria of III–V compoundsActa Metallurgica, 1963
- Thermodynamics of phase diagrams of binary systems involving compoundsActa Metallurgica, 1958