Non-alloyed ohmic contact to n-GaAs by solid phase epitaxy
- 1 August 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (3), 298-300
- https://doi.org/10.1063/1.96198
Abstract
A non‐alloyed ohmic contact to n‐type GaAs has been demonstrated. The technique of solid phase epitaxy through a transport medium has been used to obtain a metal/Ge(n+, epi)/GaAs(n, 〈100〉) heterostructure. The resulting contact displays a smooth surface and low contact resistivity (∼10−6–10−5 Ω cm2) when compared with standard Au‐Ge contacts on n‐GaAs with similar doping concentrations (∼1018/cm3).Keywords
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