Development ot ohmic contacts for GaAs devices using epitaxial Ge films
Open Access
- 1 August 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 13 (4), 430-435
- https://doi.org/10.1109/jssc.1978.1051073
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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- Investigation of the AuGeNi system used for alloyed contacts to GaAsSolid-State Electronics, 1977
- Metallic Contact on GaAs Microwave DevicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
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- New method for producing ideal metal-semiconductor ohmic contactsElectronics Letters, 1974
- Electron tunneling and contact resistance of metal-silicon contact barriersSolid-State Electronics, 1970
- ELECTRICAL CHARACTERISTICS OF EPITAXIAL GERMANIUM FILMS VACUUM DEPOSITED ON SEMI-INSULATING GaAs UP TO THICKNESSES OF 106 ÅApplied Physics Letters, 1966
- Preparation of Ge-GaAs Heterojunctions by Vacuum EvaporationJapanese Journal of Applied Physics, 1965
- Epitaxy of Germanium Films on Germanium by Vacuum EvaporationJournal of Applied Physics, 1962