Effect of hydrogen on the intrinsic stress in ion beam sputtered amorphous silicon films
- 1 August 1986
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 85 (3), 261-272
- https://doi.org/10.1016/0022-3093(86)90001-3
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Effect of silane dilution on intrinsic stress in glow discharge hydrogenated amorphous silicon filmsJournal of Applied Physics, 1984
- Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eVPhysical Review B, 1984
- Hydrogen-related mechanical stress in amorphous silicon and plasma-deposited silicon nitrideThin Solid Films, 1983
- Effect of Deposition Conditions on Intrinsic Stress in a-Si: H FilmsJapanese Journal of Applied Physics, 1983
- Errors in “Effects of component optical activity in data reduction and calibration of rotating-analyzer ellipsometers”Journal of the Optical Society of America, 1981
- On the thermoelastic properties of hydrogenated amorphous siliconMaterials Science and Engineering, 1981
- Use of nuclear reaction analysis to characterize the elemental composition and density of thin film amorphous siliconSolar Cells, 1980
- Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substratesJournal of Applied Physics, 1978
- Effects of component optical activity in data reduction and calibration of rotating-analyzer ellipsometersJournal of the Optical Society of America, 1974
- Thickness measurement of silicon dioxide layers by ultraviolet-visible interference methodSolid-State Electronics, 1964