Thickness measurement of silicon dioxide layers by ultraviolet-visible interference method
- 31 October 1964
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 7 (10), 755-761
- https://doi.org/10.1016/0038-1101(64)90033-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and SteamJournal of the Electrochemical Society, 1963
- Epitaxial Deposition of Silicon in a Hot-Tube FurnaceJournal of the Electrochemical Society, 1962
- Physical and Dielectric Properties of the Metal-Silicon Dioxide-Silicon SystemJournal of the Electrochemical Society, 1962
- Oxidation of Silicon by High-Pressure SteamJournal of the Electrochemical Society, 1962
- Measurement of Thickness and Refractive Index of Oxide Films on SiliconJournal of the Electrochemical Society, 1962
- Interference Method for Measuring the Thickness of Epitaxially Grown FilmsJournal of Applied Physics, 1961