Thermal reaction of Ti evaporated on GaAs
- 15 August 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (4), 263-265
- https://doi.org/10.1063/1.89039
Abstract
The thermal reaction of a vacuum‐evaporated Ti film with substrate GaAs has been investigated using Auger electron spectroscopy and x‐ray diffractometry. As accumulation and Ga depletion at the Ti/GaAs interface and Ga pileup in front of the As‐rich layer have been observed. The As‐rich and the Ga‐rich layers have been found to be composed of TiAs/Ti5As3 and Ti2Ga3/Ti5Ga4, respectively. It has also been found that the rate of the Ti‐GaAs reaction is governed by the interdiffusion process of Ti and As at the interface with an activation energy of 1.70±0.05 eV. The low diffusivity and relatively high Schottky barrier height of the present system facilitate the formation of useful Schottky barrier junctions.Keywords
This publication has 7 references indexed in Scilit:
- Interdiffusions in thin-film Au on Pt on GaAs (100) studied with Auger spectroscopyJournal of Applied Physics, 1975
- Reaction of sputtered Pt films on GaAsJournal of Physics and Chemistry of Solids, 1975
- Sintered ohmic contacts to n-and p-type GaAsIEEE Transactions on Electron Devices, 1975
- Metallization scheme for n−GaAs Schottky diodes incorporating sintered contacts and a W diffusion barrierApplied Physics Letters, 1975
- Forward I-V characteristics of Pt/n-GaAs Schottky barrier contactsSolid-State Electronics, 1974
- Reaction rates for Pt on GaAsApplied Physics Letters, 1974
- Effect of alloying behavior on the electrical characteristics of n-GaAs Schottky diodes metallized with W, Au, and PtApplied Physics Letters, 1973