Injection and removal of ionic charge at room temperature through the interface of air with SiO2
- 1 December 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (12), 5506-5510
- https://doi.org/10.1063/1.1662186
Abstract
A method has been found for introducing ions into SiO2 that are highly mobile at room temperature. This is done by contaminating the surface of the oxide with a salt containing the ion to be introduced, followed by charging with a corona discharge. Positive ions move rapidly through a thin layer of oxide and accumulate at the silicon interface where their presence is detected by means of C‐V measurements. Charge introduced in this way can be subsequently removed by charging with a negative corona, followed by washing in water and annealing.Keywords
This publication has 21 references indexed in Scilit:
- Image forces and the behavior of mobile positive ions in silicon dioxideApplied Physics Letters, 1973
- Ion Neutralization Processes at Insulator Surfaces and Consequent Impurity Migration Effects in SiFilmsPhysical Review Letters, 1973
- Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS StructuresJournal of the Electrochemical Society, 1971
- Ionic Contamination and Transport of Mobile Ions in MOS StructuresJournal of the Electrochemical Society, 1971
- Proton and sodium transport in SiO2filmsIEEE Transactions on Electron Devices, 1967
- SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMSApplied Physics Letters, 1967
- Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysisIEEE Transactions on Electron Devices, 1966
- Observations on phosphorus stabilized SiO2filmsIEEE Transactions on Electron Devices, 1966
- An investigation of instability and charge motion in metal-silicon oxide-silicon structuresIEEE Transactions on Electron Devices, 1966
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965