2.5-Watt and 5- Watt Internally Matched GaAs FETs for 10.7-11.7 and 14-14.5 GHz Bands
- 23 March 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 86, 455-458
- https://doi.org/10.1109/mwsym.1986.1132219
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Thermal Characterization of Microwave Power FETs Using Nematic Liquid CrystalsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A Semi Automated Scalar-Vector Setup for Load and Source Pull MeasurementPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Control of gate—Drain avalanche in GaAs MESFET'sIEEE Transactions on Electron Devices, 1980
- A Large Scale Reliability Study of Burnout Failure in GaAs Power FETs8th Reliability Physics Symposium, 1980
- Improvement of the drain breakdown voltage of GaAs power MESFET's by a simple recess structureIEEE Transactions on Electron Devices, 1978