Measurement of 'material' parameters in multi-quantum-well structures
- 1 September 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (9), 597-606
- https://doi.org/10.1088/0268-1242/2/9/006
Abstract
Multi-quantum-well (MQW) structures can be regarded as new materials whose properties are determined by the well and barrier thicknesses Lz and LB and the well depth (which is composition dependent). Measurements of Lz, LB and x are reported for 16 MQW samples grown by molecular beam epitaxy in the AlxGa1-xAs system. Results from X-ray diffraction, photoluminescence excitation spectroscopy and transmission electron microscopy are found to compare well with each other and with values predicted from MBE growth conditions.Keywords
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