Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs
- 6 March 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 40 (10), 656-659
- https://doi.org/10.1103/physrevlett.40.656
Abstract
The interfaces between a thin (∼20-Å) abrupt epitaxial layer of Ge grown on substrates of (111), (110), and (100) GaAs have been investigated with x-ray photoelectron spectoscopy. Observed changes in core-level binding energies have been directly related to the crystallographic orientation dependence of interface dipoles and variations of band-gap discontinuities. The orientation variation of the band-gap discontinuities is found to be a significant fraction (≈ ¼) of the total band-gap discontinuity.Keywords
This publication has 14 references indexed in Scilit:
- Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic StructurePhysical Review Letters, 1977
- Electronic structure at an abrupt GaAs–Ge interfaceJournal of Vacuum Science and Technology, 1977
- Elementary theory of heterojunctionsJournal of Vacuum Science and Technology, 1977
- Composition, structure, surface states, and O2 sticking coefficient for differently prepared GaAs(111)As surfacesSurface Science, 1977
- Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge InterfacePhysical Review Letters, 1977
- Heterojunction band discontinuitiesApplied Physics Letters, 1976
- Problems in the theory of heterojunction discontinuitiesC R C Critical Reviews in Solid State Sciences, 1975
- Epitaxy of Germanium Films on Gallium Arsenide by Vacuum EvaporationJournal of Applied Physics, 1966
- Effect of Crystal Orientation on Ge-GaAs HeterojunctionsJournal of Applied Physics, 1964
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962