An improved AuGeNi ohmic contact to n-type GaAs
- 1 July 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (7), 729-737
- https://doi.org/10.1016/0038-1101(87)90112-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- In situ X-ray diffraction study of melting in gold contacts to gallium arsenideSolid-State Electronics, 1984
- Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAsJournal of Applied Physics, 1983
- Ohmic contacts to III–V compound semiconductors: A review of fabrication techniquesSolid-State Electronics, 1983
- Ohmic contacts to GaAs lasers using ion-beam technologyIEEE Transactions on Electron Devices, 1983
- An improved AuGe ohmic contact to n-GaAsSolid-State Electronics, 1982
- Metallurgical and electrical characterization of metal-semiconductor contactsThin Solid Films, 1980
- The Alloying of Gold and Gold Alloy Ohmic Contact Metallizations with Gallium ArsenideJournal of the Electrochemical Society, 1980
- Alloying behavior of Ni/Au-Ge films on GaAsJournal of Applied Physics, 1980
- Development ot ohmic contacts for GaAs devices using epitaxial Ge filmsIEEE Journal of Solid-State Circuits, 1978
- Contact Resistance and Contact ResistivityJournal of the Electrochemical Society, 1972