Optical studies of impurity trapping at the GaAlAs/GaAs interface in quantum well structures
- 1 December 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (11), 4307-4312
- https://doi.org/10.1063/1.335516
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Effects of prelayers on minority-carrier lifetime in GaAs/AlGaAs double heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1984
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBEJapanese Journal of Applied Physics, 1984
- Low-temperature exciton trapping on interface defects in semiconductor quantum wellsPhysical Review B, 1984
- Enhanced luminescence from AlGaAs/GaAs single quantum well structures through improved interfacesJournal of Vacuum Science & Technology B, 1984
- Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1984
- Use of a superlattice to enhance the interface properties between two bulk heterolayersApplied Physics Letters, 1983
- Extrinsic photoluminescence from GaAs quantum wellsPhysica B+C, 1983
- Extrinsic layer at AlxGa1−xAs-GaAs interfacesApplied Physics Letters, 1982
- Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxyApplied Physics Letters, 1982
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981