Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxy
- 15 March 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (6), 520-522
- https://doi.org/10.1063/1.93164
Abstract
We report the first direct observation of deep levels associated with the n‐GaAs/N‐Al0.25Ga0.75As heterointerface in a double heterostructure (DH) laser grown by molecular beam epitaxy (MBE). The concentration of these states in a nonoptimum device having a high threshold current density is 3×1010 cm−2. The states have an average energy of Ec−0.66 eV and appear to be localized in the n‐GaAs within 140 Å of the interface. The relationship of these states to the laser threshold is discussed.Keywords
This publication has 15 references indexed in Scilit:
- Summary Abstract: Luminescence properties and structure of GaAs–Ga1−xAlxAs double heterostructure and multiple quantum wells superlatticesJournal of Vacuum Science and Technology, 1981
- Dependence of the structural and optical properties of GaAs-Ga1−xAlxAs multiquantum-well structures on growth temperatureApplied Physics Letters, 1981
- The effect of substrate temperature on the current threshold of GaAs-AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1980
- Very low current threshold GaAs-AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1980
- Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxyElectronics Letters, 1980
- Low-current-threshold and high-lasing uniformity GaAs–AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1979
- The influence of bulk nonradiative recombination in the wide band-gap regions of molecular beam epitaxially grown GaAs-AlxGa1−xAs DH lasersApplied Physics Letters, 1978
- Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodesApplied Physics Letters, 1978
- A search for interface states in an LPE GaAs/AlxGa1−xAs heterojunctionApplied Physics Letters, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974