Fabrication of field-effect transistor device with higher fullerene, C88

Abstract

A fullerene field-effect transistor (FET) device has been fabricated with thin films of ${\mathrm{C}}_{88}$ , and $n$ -channel normally on depletion-type FET properties have been found in this FET device. The ${\mathrm{C}}_{88}$ FET exhibited a high mobility, $\mu$ , of $2.5\times {10}^{-3}{\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ at 300 K, in fullerene FETs. The carrier transport showed a thermally activated hopping transport. The $n$ -channel normally on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of ${\mathrm{C}}_{88}$ thin films.