Infrared studies of isothermal annealing of ion-implanted silicon: Refractive indices, regrowth rates, and carrier profiles

Abstract

A model-dependent computer analysis technique developed previously has in this work been applied to the infrared reflection data of a number of 〈111〉 and 〈100〉 oriented Si samples which were implanted with high fluences of Si or P ions and then taken through an isothermal annealing process. The physical properties deduced from this analysis are: (i) Dielectric properties including the frequency dependent refractive indices of the recrystallized Si and of the a-Si as a function of annealing temperature and time; (ii) structural information including the amorphous layer depth, widths of transition regions, the epitaxial regrowth rates; and (iii) electrical properties including the depth profile of the carrier density, the carrier mobility near the maximum carrier density, and the carrier activation efficiency. The physical interpretation of the results is discussed and, where possible, comparisons with results of other experiments are made.