Ordering and Absolute Energies of theandConduction Band Minima in GaAs
- 20 September 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 37 (12), 766-769
- https://doi.org/10.1103/physrevlett.37.766
Abstract
Resolved critical point structures in Schottky-barrier electroreflectance spectra of - conduction band transitions in the 20-22-eV range provide a direct proof that the equivalent minima lie approximately 170±30 meV below the minima in GaAs. This ordering, opposite to that assumed and apparently supported by previous experiments, is in fact consistent with these experiments and provides natural explanations for many formerly puzzling features of GaAs.
Keywords
This publication has 25 references indexed in Scilit:
- Effect of composition and pressure on the nitrogen isoelectronic trap inPhysical Review B, 1976
- The conduction band structures of GaAs and InPJournal of Physics C: Solid State Physics, 1973
- Electrical Properties of-Type Epitaxial GaAs at High TemperaturesPhysical Review B, 1972
- The Effect of Nitrogen Doping on GaAs1−xPx Electroluminescent DiodesApplied Physics Letters, 1971
- Electrical Properties of the GaAsMinima at Low Electric Fields from a High-Pressure ExperimentPhysical Review B, 1970
- The X1c conduction band minimum in high purity epitaxial n-type GaAsSolid State Communications, 1970
- Transport Properties of GaAs Obtained from Photoemission MeasurementsPhysical Review B, 1969
- Location of theandMinima in GaAs as Determined by Photoemission StudiesPhysical Review B, 1968
- Optical Absorption due to Inter-Conduction-Minimum Transitions in Gallium ArsenidePhysical Review B, 1968
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960