Comment on ’’Comparison of experimental and theoretical carrier concentrations in heavily doped n-type silicon’’
- 1 August 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (8), 3618-3619
- https://doi.org/10.1063/1.324169
Abstract
It is shown that screening effects account for most of the reduction in impurity activation energy given by recent measuremments of the Hall effect and conductivity in n‐type Si.Keywords
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