Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness
- 1 July 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 18 (4), 1163-1168
- https://doi.org/10.1116/1.582318
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked “N–O–N” gate dielectricsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Monolayer-level controlled incorporation of nitrogen at Si–SiO2 interfaces using remote plasma processingJournal of Vacuum Science & Technology A, 1999
- Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopyJournal of Vacuum Science & Technology A, 1999
- Modeled tunnel currents for high dielectric constant dielectricsIEEE Transactions on Electron Devices, 1998
- Thermally assisted hole tunneling at theinterface and the energy-band diagram of metal-nitride-oxide-semiconductor structuresPhysical Review B, 1998
- Integrated processing of silicon oxynitride films by combined plasma and rapid-thermal processingJournal of Vacuum Science & Technology A, 1996
- Deposition of single phase, homogeneous silicon oxynitride by remote plasma-enhanced chemical vapor deposition, and electrical evaluation in metal–insulator–semiconductor devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Fixed and trapped charges at oxide–nitride–oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Formation of device-quality metal–insulator–semiconductor structures with oxide–nitride–oxide dielectrics by low-temperature plasma-assisted processing, combined with high-temperature rapid thermal annealingJournal of Vacuum Science & Technology A, 1993