The effect of mixing hydrogen with silane on the electronic and optical properties of hydrogenated amorphous silicon thin films
- 1 March 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 113 (4), 261-270
- https://doi.org/10.1016/0040-6090(84)90468-1
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Some Properties of Intrinsic and Phosphorus Doped Amorphous Silicon Thin FilmsJapanese Journal of Applied Physics, 1983
- Properties of amorphous hydrogenated silicon, with special emphasis on preparation by sputteringSolar Energy Materials, 1981
- Transport properties of a-Si: H alloys prepared by r.f. sputtering IPhilosophical Magazine Part B, 1981
- Influence of sputtering conditions on H content and SiH bonding in aSi: H alloysJournal of Non-Crystalline Solids, 1981
- Recent developments in amorphous silicon solar cellsSolar Energy Materials, 1980
- Characterized of glow-discharge deposited a-Si:HSolar Energy Materials, 1980
- On the role of hydrogen in a-SiJournal of Non-Crystalline Solids, 1980
- The interpretation of transport results in amorphous siliconJournal of Non-Crystalline Solids, 1980
- Glow discharge produced amorphous silicon solar cellsSurface Science, 1979
- Preparation of highly photoconductive amorphous silicon by rf sputteringSolid State Communications, 1977