InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth
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- 1 January 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (21), 1809-1810
- https://doi.org/10.1049/el:20001274
Abstract
The authors have fabricated an InP/InGaAs uni-travelling-carrier photodiode that exhibits a 3 dB bandwidth of 310 GHz and a pulse width (FWHM) of 0.97 ps, both of which are record values for photodetectors operating at a wavelength of 1.55 µm. The average electron velocity in the depletion region is estimated to be 3.0 × 107 cm/s.Keywords
This publication has 2 references indexed in Scilit:
- InP/InGaAs uni-travelling-carrier photodiode with 220 GHz bandwidthElectronics Letters, 1999
- Electron transport in InP at high electric fieldsApplied Physics Letters, 1983