InP/InGaAs uni-travelling-carrier photodiode with 220 GHz bandwidth
- 1 January 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (18), 1556-1557
- https://doi.org/10.1049/el:19991043
Abstract
An InP/InGaAs uni-travelling-carrier photodiode with a record 3 dB bandwidth of 220 GHz at a wavelength of 1.55 µm has been fabricated. The estimated average electron velocity in the depletion region is > 2.3 × 107 cm/s, which indicates that non-equilibrium electron transport is taking place in the collection layer.Keywords
This publication has 4 references indexed in Scilit:
- InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHzIEEE Photonics Technology Letters, 1998
- Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency productIEEE Photonics Technology Letters, 1995
- Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1994
- Electron transport in InP at high electric fieldsApplied Physics Letters, 1983