The control of gas phase kinetics to maximize densification during chemical vapor infiltration
- 1 November 1990
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 5 (11), 2729-2736
- https://doi.org/10.1557/jmr.1990.2729
Abstract
A serious problem during the fabrication of composite materials by isothermal chemical vapor infiltration is that the matrix forms more rapidly at the external edges of the body and traps a large amount of porosity inside. In theory, this problem can be eliminated by controlling the gas-phase kinetics to obtain densification which is more rapid in the center of a preform than at its outer surfaces. An analysis of a first-order gas-phase reaction followed by a first-order deposition reaction indicates that improved infiltration is possible under a relatively narrow range of conditions.Keywords
This publication has 2 references indexed in Scilit:
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- The Nitridation of High Purity, Laser-Synthesized Silicon Powder to Form Reaction Bonded Silicon NitridePublished by Wiley ,1988