Quarter-wave Bragg reflector stack of InP-In0.53Ga0.47As for 1.65 μm wavelength
- 22 January 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (4), 315-317
- https://doi.org/10.1063/1.102814
Abstract
Quarter‐wave semiconductor mirrors of InP‐In0.53Ga0.47As for high reflectivity at 1.65 μm wavelength are epitaxially grown using metalorganic chemical vapor deposition. Doping of the In0.53Ga0.47As layers is found to be critical for high reflectivity at wavelengths corresponding to the In0.53Ga0.47As band gap. n‐type doping reduces the band‐to‐band absorption resulting in high reflectivity while p‐type doped mirrors show reduced reflectivity.Keywords
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