Variation of the thickness and composition of lpe InGaAsP, InGaAs, and InP layers grown from a finite melt by the step-cooling technique
- 1 January 1981
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (1), 119-140
- https://doi.org/10.1007/bf02654905
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
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