Nucleation effects during MBE growth of Sn-Doped GaAs
- 1 May 1982
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 28 (1), 63-71
- https://doi.org/10.1007/bf00617784
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Oscillations in the surface structure of Sn-doped GaAs during growth by MBESurface Science, 1981
- Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1980
- Quantitative measurement of impurities in GaAs layers by secondary ion mass spectrometrySurface and Interface Analysis, 1980
- Improved molecular-beam epitaxial GaAs power FET’sJournal of Applied Physics, 1980
- A correlation between electron traps and growth processes in n-GaAs prepared by molecular beam epitaxyApplied Physics Letters, 1980
- Growth temperature dependence in molecular beam epitaxy of gallium arsenideJournal of Crystal Growth, 1978
- Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxyJournal of Crystal Growth, 1978
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Surface segregation of Sn during MBE of n-type GaAs established by SIMS and AESJournal of Vacuum Science and Technology, 1978
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975