Field-effect phenomena in hydrogenated amorphous silicon photoreceptors

Abstract

The imaging properties of hydrogenated amorphous silicon (a-Si:H) photoreceptors overcoated with insulating passivation layers are discussed. Field-effect phenomena are shown to interfere with the electrophotographic imaging process in this device configuration. Since photoreceptors are majority carrier devices and a-Si:H is an extrinsic material, the field-effect phenomena can be counteracted by proper doping of the a-Si:H-insulator interface.