Semiconductor to semimetal transition in TiS2at 40 kbar
- 30 May 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (15), 2713-2734
- https://doi.org/10.1088/0022-3719/17/15/010
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Stoichiometry effects in angle -resolved photoemission and transport studies of Ti1+xS2Journal of Physics C: Solid State Physics, 1983
- Relativistic p-d gaps of 1T TiSe2, TiS2, ZrSe2and ZrS2Journal of Physics C: Solid State Physics, 1982
- Angle-resolved photoemission studies of the band structure of Tiand TiPhysical Review B, 1980
- Electronic band structure and bonding in transition metal layered dichalcogenides by atomic orbital methodsJournal of Physics C: Solid State Physics, 1978
- Lithium intercalation via -Butyllithium of the layered transition metal dichalcogenidesMaterials Research Bulletin, 1975
- Optical, electrical-transport, and heat-capacity studies of the solid solutions , , andPhysical Review B, 1974
- Effect of Phonon- and Electron-Electron-InducedTransitions on the Thermopower of the Transition MetalsPhysical Review B, 1971
- Effect of electron—electron scattering on the electrical and thermal conductivity of metalsPhilosophical Magazine, 1963
- Effect of Pressure on emf of ThermocouplesJournal of Applied Physics, 1961
- The contribution to the electrical resistance of metals from collisions between electronsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1937