Prognosis for High-Z Semiconductor Detectors
- 1 January 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 22 (1), 205-210
- https://doi.org/10.1109/tns.1975.4327641
Abstract
Considerable interest has been generated recently in the use of high-Z semiconductors for x-ray spectroscopy. To aid in this study, a Monte-Carlo computational model has been used to simulate x-ray spectral response in semiconductor detectors. The model employs one-dimensional charge collection in an arbitrary electric field profile and includes trapping and electronics system effects. Spectra are calculated for several materials, including HgI2 and CdTe, and are compared to experimental results.Keywords
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