CdTe Detectors from Indium-Doped Tellurium-Rich Solutions
- 1 February 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 21 (1), 315-321
- https://doi.org/10.1109/tns.1974.4327477
Abstract
Semi-insulating CdTe was grown from indium-doped tellurium-rich solutions. Ten 1/2-cm3 devices were fabricated with resolutions as low as 6% (FWHM) for 137Cs. Polarization phenomena were not observed for tests performed from -36 to 65°C. Full energy peak counting efficiencies were less than theoretically predicted because of trapping. In addition, resolutions as low as 3 keV for 241Am were obtained with smaller (432747715 mm3) devices.Keywords
This publication has 7 references indexed in Scilit:
- Purification of CdTe from, tellurium-rich solutionsJournal of Electronic Materials, 1974
- Polarization Phenomena in CdTe: Preliminary ResultsCanadian Journal of Physics, 1973
- CdTe Gamma Spectrometers for Nondestructive Analysis of Nuclear FuelsIEEE Transactions on Nuclear Science, 1973
- The Evaluation of CdTe for Nucleonic Fuel GaugingIEEE Transactions on Nuclear Science, 1973
- Growth of Semi-Insulating Cadmium TellurideJournal of the Electrochemical Society, 1971
- GAMMA SPECTROSCOPY WITH SEMIINSULATING CADMIUM TELLURIDEApplied Physics Letters, 1970
- Cadmium telluride, grown from tellurium solution, as a material for nuclear radiation detectorsPhysica Status Solidi (a), 1970