Photoemissive Studies of the Band Structure of Silicon
- 1 November 1962
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 9 (9), 385-389
- https://doi.org/10.1103/PhysRevLett.9.385
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.9.385Keywords
This publication has 15 references indexed in Scilit:
- Direct and Indirect Excitation Processes in Photoelectric Emission from SiliconPhysical Review B, 1962
- Interband Transitions in Groups 4, 3-5, and 2-6 SemiconductorsPhysical Review Letters, 1962
- The production of pairs in semiconductors by low energy electronsJournal of Physics and Chemistry of Solids, 1961
- Fundamental Reflectivity Spectrum of Semiconductors with Zinc-Blende StructureJournal of Applied Physics, 1961
- Some Electrical and Optical Properties of ZnSeJournal of Applied Physics, 1961
- Optical investigation of the band structure of Ge-Si alloysJournal of Physics and Chemistry of Solids, 1961
- Photoemission and Related Properties of the Alkali-AntimonidesJournal of Applied Physics, 1960
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960
- Photoemission from Si Induced by an Internal Electric FieldPhysical Review B, 1960
- p Layers on Vacuum Heated SiliconJournal of Applied Physics, 1960