Scalable small-signal model for BJT self-heating
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (12), 649-651
- https://doi.org/10.1109/55.116943
Abstract
The effects of self-heating on BJT (bipolar junction transistor) behavior are demonstrated through measurement and simulation. Most affected are the small-signal parameters Y/sub 22/ and Y/sub 12/. A frequency-domain solution to the heat-flow equation is presented. It applies to any rectangular emitter geometry. This model, although simple enough for CAD, predicts thermal spreading impedance with good accuracy for a wide range of frequencies.Keywords
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