Spin-dependent recombination at dangling bonds in-Si:H
- 15 March 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (6), 4334-4337
- https://doi.org/10.1103/physrevb.25.4334
Abstract
Studies of optically detected magnetic resonance (ODMR) provide detailed information about recombination in hydrogenated amorphous silicon. Two different spin-dependent effects are found which quench the luminescence. One process is identified as nonradiative recombination at dangling bonds. Time-resolved ODMR measurements confirm that the effect occurs at unthermalized spins and provide a new technique for measuring spin-lattice-relaxation times.Keywords
This publication has 13 references indexed in Scilit:
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- Radiative and nonradiative recombination processes in hydrogenated amorphous silicon as elucidated by optically detected magnetic resonanceSolid State Communications, 1981
- Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductorsAdvances in Physics, 1981
- Electron spin resonance measurements on amorphous siliconSolar Cells, 1980
- Luminescence and ESR studies of defects in hydrogenated amorphous siliconSolid State Communications, 1980
- The behaviour of donor-acceptor recombination emission in II-VI crystals subjected to magnetic resonanceJournal of Physics C: Solid State Physics, 1979
- Luminescence studies of plasma-deposited hydrogenated siliconPhysical Review B, 1978
- Optically detected electron spin resonance in amorphous siliconSolid State Communications, 1978
- Spin dependent luminescence in hydrogenated amorphous siliconPhilosophical Magazine Part B, 1978
- Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon CarbidePhysical Review Letters, 1969