Towards high performance GaInAsN∕GaAsN laser diodes in 1.5 μm range

1 January 2002

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 38 (20), 1183-1184
https://doi.org/10.1049/el:20020812

Abstract

GaInAsN/GaAsN/AlGaAs double quantum well lasers with emission at 1.49 µm grown by solid source molecular beam epitaxy is investigated. The devices show the lowest threshold currents (120 mA) and highest output powers (130 mW pulsed) reported to date for GaAs-based 1.5 µm lasers.

Keywords

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