Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature
- 1 January 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (2), 93-95
- https://doi.org/10.1049/el:20010098
Abstract
The authors report on electrically pumped MBE-grown VCSELs on GaAs substrate with an InGaAsN active region, emitting above 1.28 µm with record characteristics. The CW output power at room temperature exceeds 500 µW with an initial slope efficiency of 0.17 W/A.Keywords
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