Ion-beam-induced formation of the PdSi silicide

Abstract
Formation of PdSi has been obtained by implanting energetic Xe ions through a thin Pd (or Pd2Si) film on a Si substrate. The PdSi phase was found to form near the Pd2Si‐Si interface from Rutherford backscattering measurements. Phase formation was confirmed by glancing‐angle x‐ray‐diffraction analysis. Subsequent thermal annealing at 300–400 °C resulted in successive growth of the phase. A uniform PdSi layer was obtained at the final stage of the annealing and exhibited a sheet resistivity of 18 μΩ cm.