Migration of implanted indium in silicon as a function of thermal annealing
- 1 April 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (7), 575-577
- https://doi.org/10.1063/1.94006
Abstract
The study of indium implantation in silicon has gained considerable interest because of its potential in producing high value resistors in integrated circuits. We have studied the redistribution of indium as a function of high-temperature anneal and dose. While the data show some anomalous redistribution, the bulk of the implanted indium remains undisturbed supporting a trapping mechanism during solid phase epitaxial growth for high-temperature thermal anneals up to 1050 °C.Keywords
This publication has 13 references indexed in Scilit:
- Depth profiles of Fe and Cr implants in InP after annealingJournal of Applied Physics, 1982
- SIMS Studies of 9Be Implants in Semi‐Insulating InPJournal of the Electrochemical Society, 1982
- Thermal redistribution of indium in amorphous silicon layersRadiation Effects, 1982
- Limits to solid solubility in ion implanted siliconNuclear Instruments and Methods, 1981
- Anomalous migration of fluorine and electrical activation of boron in BF+2-implanted siliconApplied Physics Letters, 1978
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Implanted high value resistorsSolid-State Electronics, 1976
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969