Implanted noble gas atoms as diffusion markers in silicide formation
- 1 February 1975
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 25 (2), 393-402
- https://doi.org/10.1016/0040-6090(75)90057-7
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- The Use of Rutherford Backscattering to Study the Behavior of Ion-Implanted Atoms During Anodic Oxidation of Aluminum: Ar, Kr, Xe, K, Rb, Cs, Cl, Br, and lJournal of the Electrochemical Society, 1973