Short-wavelength (≲6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1−x)0.5P quantum well lasers
- 7 November 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (19), 1826-1828
- https://doi.org/10.1063/1.100388
Abstract
Data are presented demonstrating short‐wavelength (≲6400 Å) continuous (cw) laser operation of p‐n diode In0.5(AlxGa1−x)0.5P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from −30 °C to room temperature (RT≊300 K, λ≊6395 Å) the threshold current density changes from 2.3×103 A/cm2 (−30 °C) to 3.7×103 A/cm2 (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7×103 W/cm2, Jeq∼2.9×103 A/cm2) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.Keywords
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