Continuous wave operation (77 K) of yellow (583.6 nm) emitting AlGaInP double heterostructure laser diodes
- 3 March 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (9), 557-558
- https://doi.org/10.1063/1.96505
Abstract
Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm2). Magnesium was adopted as a p‐type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.Keywords
This publication has 11 references indexed in Scilit:
- 626.2-nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Room-temperature CW operation of AlGaInP double-heterostructure visible lasersElectronics Letters, 1985
- 661.7 nm room-temperature CW operation of AlGaInP double-heterostructure lasers with aluminium-containing quaternary active layerElectronics Letters, 1985
- Yellow-emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor depositionApplied Physics Letters, 1984
- MOCVD growth of (AlxGa1−x)yIn1−yP and double heterostructures for visible light lasersJournal of Crystal Growth, 1984
- High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition –Impurity Doping and 590 nm (Orange) Electroluminescence–Japanese Journal of Applied Physics, 1984
- CW Lasing Characteristics of Visible InGaAsP Lasers Grown on GaAsP SubstratesJapanese Journal of Applied Physics, 1984
- Room-temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor depositionApplied Physics Letters, 1983
- 0.66 μm room-temperature operation of InGaAlP DH laser diodes grown by MBEElectronics Letters, 1983
- MOCVD-Grown Al0.5In0.5P–Ga0.5In0.5P Double Heterostructure Lasers Optically Pumped at 90 KJapanese Journal of Applied Physics, 1982